CM50DY28 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
CM50DY28 Datasheet PDF
| الصانع | التعبئة | وصف | درجة الحرارة | |
|---|---|---|---|---|
| TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) | دقيقة°C | ماكس°C |
- Powerex Power Semiconductors CM50DU-24F
Trench Gate Design Dual IGBTMOD?? Amperes/1200 Volts - Mitsubishi Electric Semiconductor CM50DU-24H
MEDIUM POWER SWITCHING INSULATED TYPE - Mitsubishi Electric Semiconductor CM50DY-12H
MEDIUM POWER SWITCHING INSULATED TYPE - Mitsubishi Electric Semiconductor CM50DY-24H
MEDIUM POWER SWITCHING INSULATED TYPE - Mitsubishi Electric Semiconductor CM50DY-28H
MEDIUM POWER SWITCHING INSULATED TYPE - CM50DY12E
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) - CM50DY24E
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 50A I(C) - CM50DY28
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C)